CNR-IMA4

CNR – Laboratory for Characterization and Development of Materials for Photonics and Optoelectronics

TA20CNR-IMA4 

Location

Via Alla Cascata 56/C

38123 Trento,  Italy 

Description

The research activity of IFN unit is focalised on preparation and characterisation of dielectric glass-based materials for photonics and optoelectronics. The scientific and technological expertise, as well as the diagnostic techniques, which constitute an important patrimony of Trento IFN, cover the full range from the study of physical mechanisms crucial for synthesis, development and characterisation of innovative photonic materials to design and fabrication of devices suitable for application in strategic interest areas. The IFN area of expertise includes investigation of the local structure, crystallisation, energy transfer, optical and spectroscopic properties of rare-earth activated glasses, planar waveguides and photonic crystals prepared by several techniques including sol-gel route and RF-sputtering. Several original diagnostic techniques have been developed in order to assess the physical-chemical properties of synthesised materials.

Testing Capabilities

Details of the depositions, materials and geometries have to be previously discussed. The fabrication of thin film by RF-Sputtering protocol are possible. Optical and spectroscopic characterisation of material in the vis-nir region.

Technical Equipment

  • Clean room class 1000 dedicated to the fabrication of photonic structures by sol gel-route.
  • Spin coater and dip coater with thermal treatment facility for sol-gel processing.
  • Rf-sputtering for dielectric materials deposition, double target, thickness monitor with resolution of 2 Amstrongs.
  • Precision Vertical Diamond Wire Saw - Well Model 3281.
  • Novascan PSD Pro Series Ditigal UV Ozone System Cleaner.
  • Excitation sources: Laser diode 515nm@150mW, 488nm@200mW, 405nm@150mW, 375nm@70mW and 980nm@1000mW; Dye laser pumped by a Nd-YAG Laser (1064, 532,355nm); He-Ne 632, 8nm@35mW; Fiber-Pigtailed Laser diode 637nm@70mW; Fibered diode laser at 977nm@110mW, 1475nm@220mW and 1544nm@3mW; LED diode at 285nm@45mW, 300nm@26mW, 340nm@53mW and 365nm@1150mW.
  • M-line apparatus for prism coupling measurements with prism with refractive index up to3.00-3.38 (effective index range @1310 and 1550 nm) and laser at 633 nm 543.5 nm, 1319nm and 1542 nm for refractive index and attenuation coefficient measurements.
  • Optical spectrum analyser (OSA) - Measurement range 600-1750 nm - Anritsu MS971OB.
  • micro-Raman spectrometer equipped with He-Ne 632.8 nm and DPSS 532 nm lasers, CCDdetection. - Labram Aramis Jobin Yvon Horiba microRaman system.
  • Double monochromator for time resolved luminescence spectroscopy in the visible region.
  • Monochromator Horiba Scientific model MicroHR, Interchangeable dual grating turret (1200gr/mm blaze 330nm, 600 gr/mm blaze 750nm), 140 mm f/3.9 Czerny-Turner.
  • Excitation source: Xenon lamp Ozon Free 450W spectral range 250-2500nm.
  • Spectrometer for time resolved luminescence spectroscopy in near IR equipped with NIR photomultiplier and Si/InGaAs two colour photodiodes.
  • UV-VIS-NIR double beam spectrophotometer for absorption and transmission measurements from 200 to 3200 nm equipped with integrating sphere (from 200 to 1800nm) and variable angle (VASRA: 20-70 degree) reflectance measurements setup - VarianCary 5000.
  • Absolute photoluminescence quantum yields (internal quantum efficiency) of light-emitting materials mod. Hamamatsu Quantaurus-QY C11347-11, PL measurement wavelength range 300 to 950 nm, 150 W xenon light source - excitation wavelength 250 to 850 nm.

Additional information

Technology Readiness Level: 1-3

Special considerations: N/A 

Technology clusters: Materials for Energy, PV

Website: https://www.tn.ifn.cnr.it

Availability: All year

Provision of tools to prepare data sets in a FAIR way:  Yes 

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